高電子移動度トランジスタ

High-electron-mobility transistor - field-effect transistor incorporating a heterojunction as the channel. Article "高電子移動度トランジスタ" in Japanese Wikipedia has 10.2 points for quality (as of August 1, 2024). The article contains 2 references and 8 sections. The article also contains quality flaw template, which reduce quality score.

This article has the best quality in English Wikipedia. Also, this article is the most popular in that language version.

Since the creation of article "高電子移動度トランジスタ", its content was written by 23 registered users of Japanese Wikipedia and edited by 268 registered Wikipedia users in all languages.

The article is cited 104 times in Japanese Wikipedia and cited 341 times in all languages.

The highest Authors Interest rank from 2001:

• Local (Japanese): #26498 in October 2006
• Global: #41373 in March 2004

The highest popularity rank from 2008:

• Local (Japanese): #62831 in June 2009
• Global: #150920 in April 2015

There are 15 language versions for this article in the WikiRank database (of the considered 55 Wikipedia language editions).

The quality and popularity assessment was based on Wikipédia dumps from August 1, 2024 (including revision history and pageviews for previous years).

The table below shows the language versions of the article with the highest quality.

#	Language	Quality grade	Quality score
1	English (en) High-electron-mobility transistor		46.5631
2	German (de) High-electron-mobility transistor		24.7274
3	Vietnamese (vi) HEMT		23.7121
4	Russian (ru) Транзистор с высокой подвижностью электронов		22.5664
5	Catalan (ca) HEMT		16.5895
6	Japanese (ja) 高電子移動度トランジスタ		10.2404
7	Chinese (zh) 高电子迁移率晶体管		9.0011
8	Spanish (es) Transistores HEMT		7.0771
9	Indonesian (id) Transistor pergerakan-elektron tinggi		6.2008
10	Swedish (sv) HEMT		4.1996

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The following table shows the most popular language versions of the article.

The most popular language versions of the article "高電子移動度トランジスタ" in all the time

#	Language	Popularity award	Relative popularity
1	English (en) High-electron-mobility transistor		912 934
2	Japanese (ja) 高電子移動度トランジスタ		259 816
3	German (de) High-electron-mobility transistor		115 247
4	Russian (ru) Транзистор с высокой подвижностью электронов		104 257
5	Chinese (zh) 高电子迁移率晶体管		64 432
6	Spanish (es) Transistores HEMT		43 637
7	Italian (it) HEMT		27 288
8	Indonesian (id) Transistor pergerakan-elektron tinggi		11 208
9	French (fr) MODFET		9 942
10	Swedish (sv) HEMT		5 556

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The following table shows the language versions of the article with the highest popularity in the last month.

The most popular language versions of the article "高電子移動度トランジスタ" in July 2024

#	Language	Popularity award	Relative popularity
1	English (en) High-electron-mobility transistor		2 815
2	Japanese (ja) 高電子移動度トランジスタ		582
3	German (de) High-electron-mobility transistor		417
4	Chinese (zh) 高电子迁移率晶体管		391
5	Russian (ru) Транзистор с высокой подвижностью электронов		326
6	French (fr) MODFET		73
7	Spanish (es) Transistores HEMT		64
8	Italian (it) HEMT		63
9	Polish (pl) Tranzystor o wysokiej ruchliwości elektronów		20
10	Persian (fa) ترانزیستور تحرک الکترونی بالا		17

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The following table shows the language versions of the article with the highest Authors’ Interest.

Language versions of the article "高電子移動度トランジスタ" with the highest Authors Interest (number of authors). Only registered Wikipedia users were taken into account.

#	Language	AI award	Relative AI
1	English (en) High-electron-mobility transistor		93
2	German (de) High-electron-mobility transistor		33
3	Italian (it) HEMT		32
4	Japanese (ja) 高電子移動度トランジスタ		23
5	Russian (ru) Транзистор с высокой подвижностью электронов		23
6	Spanish (es) Transistores HEMT		12
7	Catalan (ca) HEMT		9
8	Swedish (sv) HEMT		9
9	French (fr) MODFET		8
10	Indonesian (id) Transistor pergerakan-elektron tinggi		7

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The following table shows the language versions of the article with the highest Authors’ Interest in the last month.

Language versions of the article "高電子移動度トランジスタ" with the highest AI in July 2024

#	Language	AI award	Relative AI
1	Catalan (ca) HEMT		0
2	German (de) High-electron-mobility transistor		0
3	English (en) High-electron-mobility transistor		0
4	Spanish (es) Transistores HEMT		0
5	Persian (fa) ترانزیستور تحرک الکترونی بالا		0
6	French (fr) MODFET		0
7	Indonesian (id) Transistor pergerakan-elektron tinggi		0
8	Italian (it) HEMT		0
9	Japanese (ja) 高電子移動度トランジスタ		0
10	Polish (pl) Tranzystor o wysokiej ruchliwości elektronów		0

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The following table shows the language versions of the article with the highest number of citations.

Language versions of the article "高電子移動度トランジスタ" with the highest Citation Index (CI)

#	Language	CI award	Relative CI
1	Japanese (ja) 高電子移動度トランジスタ		104
2	English (en) High-electron-mobility transistor		76
3	German (de) High-electron-mobility transistor		33
4	Italian (it) HEMT		24
5	Indonesian (id) Transistor pergerakan-elektron tinggi		22
6	Russian (ru) Транзистор с высокой подвижностью электронов		18
7	Catalan (ca) HEMT		12
8	Chinese (zh) 高电子迁移率晶体管		12
9	French (fr) MODFET		11
10	Spanish (es) Transistores HEMT		10

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#	Language	Value
ca	Catalan HEMT
de	German High-electron-mobility transistor
en	English High-electron-mobility transistor
es	Spanish Transistores HEMT
fa	Persian ترانزیستور تحرک الکترونی بالا
fr	French MODFET
id	Indonesian Transistor pergerakan-elektron tinggi
it	Italian HEMT
ja	Japanese 高電子移動度トランジスタ
pl	Polish Tranzystor o wysokiej ruchliwości elektronów
ru	Russian Транзистор с высокой подвижностью электронов
sv	Swedish HEMT
uk	Ukrainian HEMT
vi	Vietnamese HEMT
zh	Chinese 高电子迁移率晶体管

Best Rank

Japanese: #62831 06.2009

Global: #150920 04.2015

Best Rank

Japanese: #26498 10.2006

Global: #41373 03.2004

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The WikiRank project is intended for automatic relative evaluation of the articles in the various language versions of Wikipedia. At the moment the service allows to compare over 44 million Wikipedia articles in 55 languages. Quality scores of articles are based on Wikipedia dumps from August, 2024. When calculating current popularity and AI of articles data from July 2024 was taken into account. For historical values of popularity and AI WikiRank used data from 2001 to 2023... More information