Quality:
SILC - increase in gate leakage current of MOSFETs. Article "Stress-induced leakage current" in English Wikipedia has 1.8 points for quality (as of November 1, 2023).
The article also contains quality flaw template, which reduce quality score.
Since the creation of article "Stress-induced leakage current", its content was written by 13 registered users of English Wikipedia and edited by 13 registered Wikipedia users in all languages.
The article is cited 6 times in English Wikipedia and cited 6 times in all languages.
The highest Authors Interest rank from 2001:
- Local (English): #71641 in February 2005
- Global: #141722 in February 2005
The highest popularity rank from 2008:
- Local (English): #1676107 in March 2013
- Global: #2689069 in March 2010
There is 1 language version for this article in the WikiRank database (of the considered 55 Wikipedia language editions).
The quality and popularity assessment was based on Wikipédia dumps from November 1, 2023 (including revision history and pageviews for previous years).